S-Parameter-Measurement-Based High-Speed Signal Transient Characterization of VLSI Interconnects on SiO/sub 2/-Si Substrate

IEEE Transactions on Advanced Packaging
doi 10.1109/6040.861562
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Optimization of High-Speed VLSI Interconnects.

English

Sensitivity Analysis and Optimization of High-Speed VLSI Interconnects.

English

Nonvolatile Field Effect Transistors Based on Protons and Si/SiO{sub 2}Si Structures

1997English

Transient Analysis of Nonuniform High-Speed Interconnects.

English

Delay and Crosstalk Simulation of High-Speed VLSI Interconnects With Nonlinear Terminations.

English

Sensitivity Analysis and Optimization of High-Speed VLSI Interconnects Using Asymptotic Waveform Evaluation.

English

Fast Method for Frequency and Time Domain Simulation of High-Speed VLSI Interconnects.

English

Synthesis and Photoluminescence Properties of Silica-Modified SiO 2 @ANA-Si-Tb@SiO 2 , SiO 2 @ANA-Si-Tb-L@SiO 2 Core–shell–shell Nanostructured Composites

Royal Society Open Science
Multidisciplinary
2019English

Effect of Postoxidation Annealing on High Temperature Grown SiO[sub 2]/4h-SiC Interfaces

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy