Dirac Point and Transconductance of Top-Gated Graphene Field-Effect Transistors Operating at Elevated Temperature

Journal of Applied Physics - United States
doi 10.1063/1.4898562
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Top-Gated Graphene Field-Effect-Transistors Formed by Decomposition of SiC

Applied Physics Letters
AstronomyPhysics
2008English

Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors

Sensors
InstrumentationInformation SystemsElectronic EngineeringBiochemistryAnalytical ChemistryMolecular Physics,ElectricalAtomicMedicineOptics
2018English

Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature

English

Influence of Metal Work Function on the Position of the Dirac Point of Graphene Field-Effect Transistors

Applied Physics Letters
AstronomyPhysics
2009English

Interface Engineering for High-Performance Top-Gated MoS2 Field Effect Transistors

2014English

Direct-Written Polymer Field-Effect Transistors Operating at 20 MHz

Scientific Reports
Multidisciplinary
2016English

Conductivity of Suspended Graphene at the Dirac Point

Physical Review B
2012English

Probing Top-Gated Field Effect Transistor of Reduced Graphene Oxide Monolayer Made by Dielectrophoresis

Solid State Communications
Materials ChemistryChemistryCondensed Matter Physics
2010English

Hysteresis Modeling in Graphene Field Effect Transistors

Journal of Applied Physics
AstronomyPhysics
2015English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy