The Results of Self Annealing Process for a Copper Interconnection on the 4xnm DRAM Products

doi 10.7567/ssdm.2012.ps-2-7
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

Formation of ULSI Interconnection by Copper Electrodeposition Process Using the Pre-Adsorption of Polyethylene Glycol Derivative

Journal of The Surface Finishing Society of Japan
2007English

Annealing Effects on the Properties of Copper Selenide Thin Films for Thermoelectric Applications

IOSR Journal of Applied Physics
2013English

A DRAM Backend for the Impulse Memory System

1998English

Adaptive-Latency DRAM: Optimizing DRAM Timing for the Common-Case

2015English

The Estimate of Demand Elastic for the Products of Copper Industry on International Market

Bulletin of the Moscow University named S U Vitte Series 1 Economics and management
2019English

Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAM

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2006English

The Colored Refresh Server for DRAM

2019English

The Effect of Primary Copper Slag Cooling Rate on the Copper Valorization in the Flotation Process

Metallurgical and Materials Engineering
AlloysMetalsMechanical Engineering
2015English

Results on the Dimension Spectrum for Self-Conformal Measures

Nonlinearity
Nonlinear PhysicsApplied MathematicsMathematical PhysicsStatisticalAstronomyPhysics
2007English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy