Erratum: ‘‘Hysteresis of Trapped Charge in AlGaSb Barrier as a Mechanism for the Current Bistability in AlGaSb/InAs/AlGaSb Double‐barrier Structures’’ [Appl. Phys. Lett. 64, 2994 (1994)]
Applied Physics Letters - United States
doi 10.1063/1.113092
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December 12, 1994
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AIP Publishing