Role of Oxygen Impurities in Etching of Silicon by Atomic Hydrogen

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - United States
doi 10.1116/1.2884731
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Vacuum Society

Related search

High Aspect Ratio Etching of Atomic Force Microscope-Patterned Nitrided Silicon

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2003English

Chemical Etching of Silicon

Microscopy Today
1997English

A Novel Source of Atomic Hydrogen for Passivation of Defects in Silicon

Physica Status Solidi - Rapid Research Letters
Materials ScienceCondensed Matter Physics
2017English

Thermodynamics of Impurities in Pure Iron Obtained by Hydrogen Reduction

Tetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan
AlloysCondensed Matter PhysicsMetalsTheoretical ChemistryMaterials ChemistryPhysical
2014English

Porous Silicon Produced by Metal-Assisted Etching

Journal of The Surface Finishing Society of Japan
2016English

Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide

English

3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching

Advanced Functional Materials
Materials ScienceCondensed Matter PhysicsElectrochemistryNanoscienceOpticalBiomaterialsMagnetic MaterialsNanotechnologyChemistryElectronic
2012English

Etching Figures of Silicon Crystal

The Journal of the Japanese Association of Mineralogists, Petrologists and Economic Geologists
1961English

Competition Between Al2O3 Atomic Layer Etching and AlF3 Atomic Layer Deposition Using Sequential Exposures of Trimethylaluminum and Hydrogen Fluoride

Journal of Chemical Physics
MedicineTheoretical ChemistryAstronomyPhysicsPhysical
2017English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy