Gate-Inducedg-Factor Control and Dimensional Transition for Donors in Multivalley Semiconductors

Physical Review B
doi 10.1103/physrevb.80.155301
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Physical Society (APS)

Related search

Strain-Inducedg-Factor Tuning in Single InGaAs/GaAs Quantum Dots

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2016English

Metal-Insulator Transition in Doped Semiconductors

Acta Physica Polonica A
AstronomyPhysics
1991English

Binding Energies of Excitons Trapped by Ionized Donors in Semiconductors

Physical Review B
2001English

Schottky‐barrier Profiling Techniques in Semiconductors: Gate Current and Parasitic Resistance Effects

Journal of Applied Physics
AstronomyPhysics
1985English

Traditional Semiconductors in the Two-Dimensional Limit

Physical Review Letters
AstronomyPhysics
2018English

Transition Metal Ions in Semiconductors: LDA, LDA+U, and Experiment

Acta Physica Polonica A
AstronomyPhysics
2015English

Control of Ferromagnetism in Magnetic Semiconductors and Application for Spin-Polarized Electron Source

Materia Japan
2010English

Centers for Disease Control ‘High-Risk’ Donors and Kidney Utilization

American Journal of Transplantation
TransplantationAllergyImmunologyPharmacology
2010English

Gate Control System for New Iraqi License Plate

Iraqi Journal for Computers and Informatics
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy