GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope

IEEE Electron Device Letters - United States
doi 10.1109/led.2017.2785785
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Compensating Temperature-Dependent Characteristics of a Subthreshold-Mosfet Analog Silicon Neuron

Journal of Robotics, Networking and Artificial Life
2016English

Polarization Control in GaN Nanowire Lasers

Optics Express
OpticsAtomicMolecular Physics,
2014English

Self-Assembled GaN Quantum Wires on GaN/AlN Nanowire Templates

Nanoscale
Materials ScienceNanotechnologyNanoscience
2012English

Low-Voltage Organic Single-Crystal Field-Effect Transistor With Steep Subthreshold Slope

English

Analytical Performance of the Threshold Voltage and Subthreshold Swing of CSDG MOSFET

Journal of Low Power Electronics and Applications
Electronic EngineeringElectrical
2019English

Monolithic Single GaN Nanowire Laser With Photonic Crystal Microcavity on Silicon

Applied Physics Letters
AstronomyPhysics
2011English

Promising Single-Photon Emitters With Reconfined InGaN/GaN Nanowire Quantum Dots

Quantum Engineering
2019English

A Widely-Tunable and Ultra-Low-Power MOSFET-C Filter Operating in Subthreshold

2009English

Effect of Subthreshold Slope on the Sensitivity of Nanoribbon Sensors

2017English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy