An Ultra-Low-Power MMIC Amplifier Using 50-Nm $\Delta$ -Doped $\Hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53} \Hbox{Ga}_{0.47}\hbox{As}$ Metamorphic HEMT
IEEE Electron Device Letters - United States
doi 10.1109/led.2010.2070484
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Date
November 1, 2010
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Institute of Electrical and Electronics Engineers (IEEE)