Hopping Process of Bound Excitons Under an Energy Gradient

Applied Physics Letters - United States
doi 10.1063/1.4863319
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Spin Dynamics of Isoelectronic Bound Excitons in ZnO

Physical Review B
2014English

Radiative Properties of Multicarrier Bound Excitons in GaAs

Physical Review B
2015English

Introductory Chapter: Bound Excitons in Gallium Phosphide

2018English

Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe2

Physical Review Letters
AstronomyPhysics
2018English

Optical Observation of Donor-Bound Excitons in Hydrogen-Implanted ZnO

Applied Physics Letters
AstronomyPhysics
2005English

Kinetics of Bound Excitons and Multi-Exciton Complexes in Si(B)

Canadian Journal of Physics
AstronomyPhysics
1983English

On ‘Spot’ Evolution Under an Adverse Pressure Gradient

Journal of Fluid Mechanics
Mechanics of MaterialsCondensed Matter PhysicsMechanical Engineering
2001English

Effect of Silicon and Oxygen Doping on Donor Bound Excitons in Bulk GaN

Physical Review B
2011English

In Search of an Appropriate Lower Bound. The Zero Lower Bound vs. The Positive Lower Bound Under Discretion and Commitment

German Economic Review
EconomicsEconometrics
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy