Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and Ms-Range Flash Lamp Annealing

Physica Status Solidi (A) Applications and Materials Science - Germany
doi 10.1002/pssa.201800618
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Wiley

Related search

III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing

Acta Physica Polonica A
AstronomyPhysics
2013English

Electrical Characterization of Ion Implantation Into GaAs

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
1987English

Ion Implantation and Annealing Studies in III-V Nitrides

1996English

Formation of Ni Silicide Using Flash Lamp Technology

2002English

Effects of P Implantation and Post-Implantation Annealing on Defect Formation in ZnO

Journal of Applied Physics
AstronomyPhysics
2012English

Ferromagnetic GeMn Thin Film Prepared by Ion Implantation and Ion Beam Induced Epitaxial Crystallization Annealing

Applied Physics Letters
AstronomyPhysics
2012English

Fluorescent Fe Embedded Magnetic Nanodiamonds Made by Ion Implantation

Scientific Reports
Multidisciplinary
2019English

Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
1995English

Highly Nitrogen-Vacancy Doped Diamond Nanostructures Fabricated by Ion Implantation and Optimum Annealing

APL Materials
Materials ScienceEngineering
2020English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy