Electrostatics of Nanowire Transistors With Triangular Cross Sections

Journal of Applied Physics - United States
doi 10.1063/1.2168229
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Silicon-Nanowire Transistors With Intruded Nickel-Silicide Contacts

English

Silicon-Nanowire Transistors With Intruded Nickel-Silicide Contacts

English

Polarity-Controllable Silicon Nanowire Transistors With Dual Threshold Voltages

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2014English

1∕f Noise of SnO2 Nanowire Transistors

Applied Physics Letters
AstronomyPhysics
2008English

Vertically Integrated Nanowire Field Effect Transistors

English

Single-Crystalline CdTe Nanowire Field Effect Transistors as Nanowire-Based Photodetector

Physical Chemistry Chemical Physics
Theoretical ChemistryAstronomyPhysicsPhysical
2014English

Transport Properties in Silicon Nanowire Transistors With Atomically Flat Interfaces

2017English

Jet Cross Sections With NNLOJET

2018English

Hierarchical Simulation of Transport in Silicon Nanowire Transistors

Journal of Computational Electronics
Electronic EngineeringElectronicMolecular Physics,SimulationOpticalElectricalAtomicMagnetic MaterialsModelingOptics
2008English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy