Ion Etching Effects Occurring in Secondary Ion Mass Spectrometry Depth Profiling of InGaAs/InP and InGaAs/AlAs/InP MBE Grown Heterostructures
Acta Physica Polonica A - Poland
doi 10.12693/aphyspola.90.869
Full Text
Open PDFAbstract
Available in full text
Date
November 1, 1996
Authors
Publisher
Institute of Physics, Polish Academy of Sciences