Direct and Indirect Transitions in (GaAs)n/(AlAs)n Superlattices With N=1-15

doi 10.1117/12.20856
Full Text
Abstract

Available in full text

Date
Authors
Publisher

SPIE

Related search

DX Centers in AlAs and GaAs-AlAs Selectively Doped Superlattices

Journal de Physique III
1991English

Characterization of GaAs-based N-N and P-N Interface Junctions Prepared by Direct Wafer Bonding

Journal of Applied Physics
AstronomyPhysics
2002English

Transport in Short-Period GaAs/AlAs Superlattices With Electric Domains

Журнал технической физики
2018English

X-Ray Analysis of Spontaneous Lateral Modulation in (InAs)n/(AlAs)m Short-Period Superlattices

Applied Physics Letters
AstronomyPhysics
2001English

N,n,n′,n′-Tetramethyl-N′′,n′′-Dipropylguanidinium Chloride–(2Z)-2,3-Diaminobut-2-Enedinitrile (1/1)

Acta Crystallographica Section E Structure Reports Online
2012English

Indirect Spectrophotometric Determination of Sulfide Ion With Silver N, N-Diethyldithiocarbamate

Nippon kagaku zassi
1969English

N,n,n′,n′,n′′,n′′-Hexamethylguanidinium 1,1,3,3-Tetracyanoprop-2-En-1-Ide

IUCrData
2016English

N = 1 $$ \Mathcal{N}=1 $$ Deformations and RG Flows of N = 2 $$ \Mathcal{N}=2 $$ SCFTs

Journal of High Energy Physics
High Energy PhysicsNuclear
2017English

Plasmon Polariton And〈n〉=0non-Bragg Gaps in Superlattices With Metamaterials

Physical Review B
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy