Effect of Retrapping on Thermoluminescence Peak Intensities of Small Amorphous Silicon Quantum Dots

Acta Physica Polonica A - Poland
doi 10.12693/aphyspola.129.362
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Physics, Polish Academy of Sciences

Related search

Direct Optical Energy Gap in Amorphous Silicon Quantum Dots

Journal of Modern Physics
2011English

Effect of Inelastic Scattering on the Average Coulomb-Blockade Peak Height in Quantum Dots

Physical Review B
2001English

Comment on “Boson Peak in Amorphous Silicon: A Numerical Study”

Physical Review B
2002English

Silicon Quantum Dots for Photovoltaics: A Review

2012English

Electronic and Optical Properties of Small Hydrogenated Silicon Quantum Dots Using Time-Dependent Density Functional Theory

Journal of Nanomaterials
Materials ScienceNanotechnologyNanoscience
2015English

Colloidal Quantum Dots for Infrared Detection Beyond Silicon

Journal of Chemical Physics
MedicineTheoretical ChemistryAstronomyPhysicsPhysical
2019English

Evidence of Magnetic Field Quenching of Phosphorous-Doped Silicon Quantum Dots

Current Applied Physics
Materials ScienceAstronomyPhysics
2014English

Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots

Physical Review Letters
AstronomyPhysics
2018English

Photoluminescence Study of Self-Limiting Oxidation in Nanocrystalline Silicon Quantum Dots

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2001English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy