Amanote Research

Amanote Research

    RegisterSign In

A Simple Parallel Conduction Extraction Method (SPCEM) for MODFETs and Undoped GaN-based HEMTs

Microelectronics Journal
doi 10.1016/j.mejo.2008.06.006
Full Text
Open PDF
Abstract

Available in full text

Date

March 1, 2009

Authors
S.B. LisesivdinN. BalkanE. Ozbay
Publisher

Elsevier BV


Related search

Light Extraction Improvement of GaN-based Light-Emitting Diodes Using Patterned Undoped GaN Bottom Reflection Gratings

2009English

GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

ECS Transactions
Engineering
2013English

A Drain-Lag Model for AlGaN/GaN Power HEMTs

IEEE MTT-S International Microwave Symposium Digest
Electronic EngineeringRadiationElectricalCondensed Matter Physics
2007English

An Investigation of Current Distribution Over Four GaN HEMTs in Parallel Configurations

2019English

Hydrodynamic Modeling of AlGaN/GaN HEMTs

English

InAlN/GaN HEMTs: Recent Progress and Challenges for the Future

2011English

Thermal Behavior Investigation of Cascode GaN HEMTs

2015English

A Rapid and Simple Bead-Bashing-Based Method for Genomic DNA Extraction From Mammalian Tissue

BioTechniques
BiochemistryBiotechnologyGeneticsMolecular Biology
2020English

Normally-Off P-GaN Gate InAlN/GaN HEMTs Grown on Silicon Substrates

2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy