(PDF) Growth and Characterization of InGaAs Nanowires

Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes - Japan

doi 10.1143/jjap.49.04dh08

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Date

April 20, 2010

Authors

Masatoshi Yoshimura

Katsuhiro Tomioka

Junichi Motohisa

Publisher

Japan Society of Applied Physics

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