(PDF) Effect of Poly/SiON Gate Stack Combined With Thin BOX

Effect of Poly/SiON Gate Stack Combined With Thin BOX and Ground Plane for Low VTH and Analog Applications of FDSOI Devices

doi 10.7567/ssdm.2008.b-9-4

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Date

September 26, 2008

Authors

C. Fenouillet-Beranger

Publisher

The Japan Society of Applied Physics

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Effect of Poly/SiON Gate Stack Combined With Thin BOX and Ground Plane for Low VTH and Analog Applications of FDSOI Devices

doi 10.7567/ssdm.2008.b-9-4

Full Text

Abstract

Date

Authors

Publisher

Related search

Analog Circuit Design Methodology Utilizing a Structure of Thin BOX FDSOI

Low Frequency Noise (1/F ) Improvements on CMOS Transistors With a Single Nmm+ Doped Poly Si-SiGe Gate Stack

Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs

On the Structural and Electrical Properties of Ferroelectric BiFeO3/HfO2 Gate Stack for Non-Volatile Memory Applications

Nonvolatile Polycrystalline Silicon Thin-Film-Transistor Memory With Oxide/Nitride/Oxide Stack Gate Dielectrics and Nanowire Channels

Broadband Green's Function With Low Wavenumber Extraction for Arbitrary Shaped Waveguide and Applications to Modeling of Vias in Finite Power/Ground Plane

Novel Dual-VTH Independent-Gate FinFET Circuits

Simulation, Design, and Fabrication of Thin-Film Resistive-Gate GaAs Charge Coupled Devices

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