Enhanced Group-V Intermixing in InGaAs/InP Quantum Wells Studied by Cross-Sectional Scanning Tunneling Microscopy

Applied Physics Letters - United States
doi 10.1063/1.124282
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Incorporation of Bi Atoms in InP Studied at the Atomic Scale by Cross-Sectional Scanning Tunneling Microscopy

Physical Review Materials
Materials ScienceAstronomyPhysics
2017English

A Comparison of Impurity-Free and Ion-Implantation-Induced Intermixing of InGaAs/InP Quantum Wells

Journal of Applied Physics
AstronomyPhysics
2000English

Doping Modulation in GaN Imaged by Cross-Sectional Scanning Tunneling Microscopy

Applied Physics Letters
AstronomyPhysics
2009English

Graphene Quantum Dots Probed by Scanning Tunneling Microscopy

Annalen der Physik
AstronomyPhysics
2017English

Effects of Pulsed Anodic Oxide on the Intermixing in InGaAs/GaAs and InGaAs/AlGaAs Quantum Wells

Journal of Applied Physics
AstronomyPhysics
2003English

Hydrogen Adsorption on Ru(001) Studied by Scanning Tunneling Microscopy

Surface Science
SurfacesCondensed Matter PhysicsInterfacesMaterials ChemistryFilmsCoatings
2008English

Defect Structure of NonstoichiometricCeO2(111)Surfaces Studied by Scanning Tunneling Microscopy

Physical Review Letters
AstronomyPhysics
1997English

Structure of Au on Ag(110) Studied by Scanning Tunneling Microscopy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1994English

Superstructures of Se-Treated GaAs(001) Surface Studied by Scanning Tunneling Microscopy.

Hyomen Kagaku
1994English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy