(PDF) Field Dependence of the Switching Field for

Field Dependence of the Switching Field for Nonellipsoidal Single Domain Particles

Journal of Applied Physics - United States

doi 10.1063/1.1452250

Full Text

Abstract

Available in full text

Categories

Date

January 1, 2002

Authors

Martha Pardavi-Horvath

Publisher

AIP Publishing

Related search

The Influence of Sn Doping on the Growth of In2O3 on Y-Stabilized ZrO2(100) by Oxygen Plasma Assisted Molecular Beam Epitaxy

Journal of Applied Physics

English

Nucleation and Growth of GaN Nanorods on Si (111) Surfaces by Plasma-Assisted Molecular Beam Epitaxy - The Influence of Si- And Mg-Doping

Journal of Applied Physics

English

Strain of M-Plane GaN Epitaxial Layer Grown on Β-LiGaO2 (100) by Plasma-Assisted Molecular Beam Epitaxy

English

Carbon Doping of GaN With CBr4 in Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Journal of Applied Physics

English

Characterization of GaN Microstructures Grown by Plasma-Assisted Molecular Beam Epitaxy

English

Effects of Hydrogen on the Morphology and Electrical Properties of GaN Grown by Plasma-Assisted Molecular-Beam Epitaxy

Applied Physics Letters

English

Growth of GaInTlAs Layers on InP by Molecular Beam Epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Condensed Matter Physics

English

Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy

Journal of Applied Physics

English

TEM Analysis of Defects in AlGaN Heterostructures Grown on C-Ai2o3 by Plasma Assisted Molecular Beam Epitaxy

Microscopy and Microanalysis

Instrumentation

English

Highly Efficient P-Type Doping of GaN Under Nitrogen-Rich and Low-Temperature Conditions by Plasma-Assisted Molecular Beam Epitaxy

English