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Modeling the Contribution of Diffusion to Device-Upset Cross Sections

IEEE Transactions on Nuclear Science - United States
doi 10.1109/tns.2002.805442
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Abstract

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Categories
Electronic EngineeringNuclearNuclear EnergyHigh Energy PhysicsEngineeringElectrical
Date

December 1, 2002

Authors
J.D. PattersonL.D. Edmonds
Publisher

Institute of Electrical and Electronics Engineers (IEEE)


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