Effect of Trap Levels and Defect Inhomogeneities on Carrier Transport in SiC Crystals and Radiation Detectors
Acta Physica Polonica A - Poland
doi 10.12693/aphyspola.107.333
Full Text
Open PDFAbstract
Available in full text
Date
February 1, 2005
Authors
Publisher
Institute of Physics, Polish Academy of Sciences