Amanote Research
Register
Sign In
Cyclic Electric Field Stress on Bipolar Resistive Switching Devices
Journal of Applied Physics
- United States
doi 10.1063/1.4859475
Full Text
Open PDF
Abstract
Available in
full text
Categories
Astronomy
Physics
Date
December 28, 2013
Authors
A. Schulman
C. Acha
Publisher
AIP Publishing
Related search
Neuromorphic Computing With Resistive Switching Memory Devices
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices
Journal of Nanoscience
Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film
Scientific Reports
Multidisciplinary
A Forming-Free Bipolar Resistive Switching Behavior Based on ITO/V2O5/ITO Structure
Applied Physics Letters
Astronomy
Physics
Resistive Switching of Rose Bengal Devices: A Molecular Effect?
Journal of Applied Physics
Astronomy
Physics
Localized Heating and Switching in MoTe2Based Resistive Memory Devices
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Volatile Resistive Switching in Cu/TaOx/Δ-Cu/Pt Devices
Applied Physics Letters
Astronomy
Physics