Amanote Research
Register
Sign In
Main Differences in Processing Si and SiC Devices
doi 10.5772/intechopen.76293
Full Text
Open PDF
Abstract
Available in
full text
Date
September 12, 2018
Authors
Fan Li
Mike Jennings
Publisher
InTech
Related search
Comparative Investigation of SiC and Si Power Electronic Devices Operating at High Switching Frequency
Bulletin of the Polish Academy of Sciences: Technical Sciences
Information Systems
Computer Networks
Molecular Physics,
Communications
Engineering
Atomic
Optics
Artificial Intelligence
Comparative Study of Optimally Designed DC-DC Converters With SiC and Si Power Devices
Processing of Poly-Si Electrodes for Charge-Coupled Devices
PROCESSING AND MECHANICAL PROPERTIES OF Si3N4/SiC NANOCOMPOSITES USING Si NITRIDED Si3N4 POWDER
Zairyo/Journal of the Society of Materials Science, Japan
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Processing of Sintered Alpha SiC
Colloidal Processing and Liquid-Phase Sintering of SiC
Journal of the Ceramic Society of Japan
Carburizing of Iron by Carbonate and Si, SiC or Charcoal
Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Mechanics of Materials
Alloys
Materials Chemistry
Condensed Matter Physics
Metals
Si Photovoltaic Semiconductor Devices Operating in Total and Partial Illumination
Acta Physica Polonica A
Astronomy
Physics
TCO-Si Based Heterojunction Photovoltaic Devices
