Interface Properties Study on SiC MOS With High-K Hafnium Silicate Gate Dielectric

AIP Advances - United States
doi 10.1063/1.5051615
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy