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Interface Properties Study on SiC MOS With High-K Hafnium Silicate Gate Dielectric
AIP Advances
- United States
doi 10.1063/1.5051615
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Categories
Nanotechnology
Astronomy
Physics
Nanoscience
Date
December 1, 2018
Authors
Lin Liang
Wei Li
Sichao Li
Xuefei Li
Yanqing Wu
Publisher
AIP Publishing
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