Amanote Research
Register
Sign In
Field Driven STT-MRAM Cell for Reduced Switching Latency and Energy
doi 10.1109/iscas.2014.6865599
Full Text
Open PDF
Abstract
Available in
full text
Date
June 1, 2014
Authors
Ravi Patel
Engin Ipek
Eby G. Friedman
Publisher
IEEE
Related search
Improving STT-MRAM Density Through Multibit Error Correction
Power-Aware Voltage Tuning for STT-MRAM Reliability
Improving STT-MRAM Density Through Multibit Error Correction
STT-MRAM Memory Cells With Enhanced on/Off Ratio
From STT-MRAM to Voltage-Control Spintronics Memory (VoCSM) in Pursuit of Memory Systems With Lower Energy Consumption
Journal of Magnetics
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Exploiting Heterogeneity for Tail Latency and Energy Efficiency
Switching Properties of Ferromagnetic Nanoparticles Driven by a Circularly Polarized Magnetic Field
Journal of Physics Condensed Matter
Materials Science
Condensed Matter Physics
Towards Zero Latency Photonic Switching in Shared Memory Networks
Concurrency Computation Practice and Experience
Computer Networks
Communications
Computer Science Applications
Computational Theory
Mathematics
Theoretical Computer Science
Software
Low Latency Driven Effective Capacity Analysis for Non-Orthogonal and Orthogonal Spectrum Access
