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Defect States and Charge Trapping Characteristics of HfO2 Films for High Performance Nonvolatile Memory Applications
Applied Physics Letters
- United States
doi 10.1063/1.4900745
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Categories
Astronomy
Physics
Date
October 27, 2014
Authors
Y. Zhang
Y. Y. Shao
X. B. Lu
M. Zeng
Z. Zhang
X. S. Gao
X. J. Zhang
J.-M. Liu
J. Y. Dai
Publisher
AIP Publishing
