Quantitative Characterization of Misfit Dislocations at GaP/Si Heteroepitaxial Interfaces via Electron Channeling Contrast Imaging and Semi-Automated Image Analysis

Microscopy and Microanalysis - United Kingdom
doi 10.1017/s1431927619001740
Full Text
Abstract

Available in full text

Categories
Instrumentation
Date
Authors
Publisher

Cambridge University Press (CUP)

Related search

Focused Ion Beam (FIB) Based Tomography of Dislocations Using Electron Channeling Contrast Imaging (ECCI)

Microscopy and Microanalysis
Instrumentation
2017English

Comparison of Dislocation Mapping Using Electron Channeling Contrast Imaging and Cross-Correlation Electron Backscattered Diffraction

Microscopy and Microanalysis
Instrumentation
2017English

Observation of Substructure in Steels and Ni200 Using Electron-Channeling Contrast Imaging

Microscopy and Microanalysis
Instrumentation
2002English

A Semi-Automated Image Analysis Procedure for in Situ Plankton Imaging Systems

PLoS ONE
Multidisciplinary
2015English

Imaging Basal Plane Stacking Faults and Dislocations in (11-22) GaN Using Electron Channelling Contrast Imaging

Journal of Applied Physics
AstronomyPhysics
2018English

Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

1992English

Whole-Slide Imaging and Automated Image Analysis

Veterinary Pathology
Veterinary
2013English

Ion Channeling Contrast Imaging of Aluminum Wire Bonds

Microscopy and Microanalysis
Instrumentation
2002English

Quantitative Imaging of Electron Density and Effective Atomic Number Using Phase Contrast CT

Physics in Medicine and Biology
RadiologicalRadiologyNuclear MedicineUltrasound TechnologyImaging
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy