W and WSix Ohmic Contacts on P- And N-Type GaN

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - United States
doi 10.1116/1.581799
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Vacuum Society

Related search

Formation of High-Quality Ag-Based Ohmic Contacts to P-Type GaN

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2008English

High Quality Nonalloyed Pt Ohmic Contacts to P-Type GaN Using Various Surface Treatment

1999English

Ohmic Contacts Study of P+N Diodes on (111) and (100) Diamond

2019English

Ohmic Contacts to P-GaN Using Au/Ni-Mg-O Metallization

Journal of Electrical Engineering
Electronic EngineeringElectrical
2010English

Two-Step Deposition of Al-Doped ZnO on P-GaN to Form Ohmic Contacts

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2017English

Low Resistance, Unannealed Ohmic Contacts to N-Type InAs0.66Sb0.34

2007English

High Temperature Stable WSi{sub X} Ohmic Contacts on GaN

1998English

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4h-SiC

Materials Science Forum
2012English

Electrical Properties of Metal Contacts on Laser-Irradiated N-Type GaN

Applied Physics Letters
AstronomyPhysics
2003English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy