Effective Schottky Barrier Lowering of Ni Silicide/P-Si(100) Using an Ytterbium Confinement Structure for High Performance N-Type MOSFETs
Materials and Design - Netherlands
doi 10.1016/j.matdes.2016.11.084
Full Text
Open PDFAbstract
Available in full text
Date
January 1, 2017
Authors
Publisher
Elsevier BV