Resonant Tunneling Characteristics in SiO2/Si Double-Barrier Structures in a Wide Range of Applied Voltage

Applied Physics Letters - United States
doi 10.1063/1.1603352
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Relativistic Resonant Tunneling Lifetime for Double Barrier System

Advances in Applied Physics
2013English

Traversal Time Through Double-Barrier Resonant Tunneling Structure

Acta Physica Polonica A
AstronomyPhysics
1993English

Hole Tunneling Times in GaAs/AlAs Double‐barrier Structures

Applied Physics Letters
AstronomyPhysics
1989English

Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes

Acta Physica Polonica A
AstronomyPhysics
1993English

The Stability of the Self‐consistently Determined Current of a Double‐barrier Resonant‐tunneling Diode

Journal of Applied Physics
AstronomyPhysics
1991English

Resonant Tunneling and Intrinsic Bistability in Twisted Graphene Structures

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2016English

Wide-Range Voltage Modulation

English

Radiation Tolerance of Si/Si0.6Ge0.4 Resonant Interband Tunneling Diodes

Journal of Applied Physics
AstronomyPhysics
2004English

Analysis of Resonant Tunneling for CdTe-CdMgTe Structures

Acta Physica Polonica A
AstronomyPhysics
1997English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy