Growth and Characteristics of GaInN/GaInN Multiple Quantum Well Light-Emitting Diodes

Journal of Applied Physics- United States

doi 10.1063/1.3327425

Full Text

Abstract

Available in

Categories

Date

March 15, 2010

Authors

Ahmed N. Noemaun

Publisher

AIP Publishing

Related search

Fish Scale Terrace GaInN/GaN Light-Emitting Diodes With Enhanced Light Extraction

Applied Physics Letters

English

Temperature Dependent Efficiency Droop in GaInN Light-Emitting Diodes With Different Current Densities

Applied Physics Letters

English

Piezoelectric Quantization in GaInN Thin Films and Multiple Quantum Well Structures

Materials Research Society Symposium - Proceedings

Mechanics of Materials

Materials Science

Condensed Matter Physics

Mechanical Engineering

English

Organic Quantum Well Light Emitting Diodes

English

On the Temperature Dependence of Electron Leakage From the Active Region of GaInN/GaN Light-Emitting Diodes

Applied Physics Letters

English

Effect of Threading Defects on InGaN∕GaN Multiple Quantum Well Light Emitting Diodes

Applied Physics Letters

English

InGaN/GaN Quantum Well Interconnected Microdisk Light Emitting Diodes

Applied Physics Letters

Indonesian

Quantum Shift of Band-Edge Stimulated Emission in InGaN–GaN Multiple Quantum Well Light-Emitting Diodes

Applied Physics Letters

Indonesian

Highly Efficient Light Emission From Stacking Faults Intersecting Nonpolar GaInN Quantum Wells

Applied Physics Letters

English