Amanote Research

Amanote Research

    RegisterSign In

Non-Selective Tungsten CVD Technology for Gate Electrodes and Interconnections

doi 10.7567/ssdm.1986.a-10-3
Full Text
Open PDF
Abstract

Available in full text

Date

January 1, 1986

Authors
Nobuo HaraNobuyoshi KobayashiSeiichi IwataNaoki Yamamoto
Publisher

The Japan Society of Applied Physics


Related search

Tungsten Selective CVD and Its Applications to VLSI Metallization.

Bulletin of the Japan Institute of Metals
1989English

Thermionic Performance of Fluoride CVD Tungsten-Niobium Converter

Energy Conversion
1972English

Tungsten Bronzes as Indicating Potentiometric Electrodes

English

Large-Area Functionalized CVD Graphene for Work Function Matched Transparent Electrodes

Scientific Reports
Multidisciplinary
2015English

Organic Solar Cells Using CVD-grown Graphene Electrodes

Nanotechnology
Mechanics of MaterialsElectronic EngineeringMechanical EngineeringMaterials ScienceNanoscienceElectricalBioengineeringNanotechnologyChemistry
2013English

20 μm Gate Width CVD Graphene FETs for 0.6 THz Detection

2014English

Enhancement-Mode In0.53Ga0.47As N-Mosfet With Self-Aligned Gate-First Process and CVD HfAlO Gate Dielectric

2008English

Lifetimes of AMTEC Electrodes: Molybdenum, Rhodium-Tungsten, and Titanium Nitride

AIP Conference Proceedings
AstronomyPhysics
2000English

Table 3: Mean Scores for Each Risk Model for Non-Cvd* and CVD Groups in the Sample.

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy