Research of Packaging Technology on SiC Power Devices Under High Temperature and High Voltage

Smart Grid
doi 10.12677/sg.2014.46035
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Hans Publishers

Related search

Packaging Technology of SiC Power Electronics

Journal of Japan Institute of Electronics Packaging
Electronic EngineeringElectrical
2014English

Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for Vertical Power Devices

Diamond and Related Materials
Electronic EngineeringAstronomyMechanical EngineeringPhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsChemistryElectronic
2010English

Synthesis and Sintering of SiC Under High Pressure and High Temperature

Journal of Materials Research
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
1999English

High-Temperature High-Power Packaging Techniques for HEV Traction Applications

2006English

Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices

IEEE Transactions on Power Electronics
Electronic EngineeringElectrical
2009English

Power Conversion With SiC Devices at Extremely High Ambient Temperatures

English

The World’s First High Voltage GaN-on-Diamond Power Semiconductor Devices

Solid-State Electronics
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2016English

Research on Ultrasonic Vibration Assisted Repair Technology of High Temperature and High Pressure Parts

Functional Materials
Materials Science
2018English

Co-Fired AlN–TiN Assembly as a New Substrate Technology for High-Temperature Power Electronics Packaging

Ceramics International
SurfacesOpticalMaterials ChemistryProcess ChemistryTechnologyMagnetic MaterialsFilmsCompositesElectronicCoatingsCeramics
2013English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy