Achievement of InSb Quantum Dots on InP(100) Substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes - Japan
doi 10.1143/jjap.49.060210
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Japan Society of Applied Physics

Related search

Controlling Polarization Anisotropy of Site-Controlled InAs/InP (100) Quantum Dots

Applied Physics Letters
AstronomyPhysics
2011English

Semiconductor Quantum Dots Grown on Patterned Substrates

Materia Japan
1998English

Formation of MnAs Dots on S-Passivated GaAs(100) Substrates

Journal of the Magnetics Society of Japan
1999English

Magnetophotoluminescence of Stacked Self-Assembled InP Quantum Dots

Applied Physics Letters
AstronomyPhysics
1999English

Thermal Annealing of InAs Quantum Dots on Patterned GaAs Substrates

2011English

Self-Assembled InAs/InP Quantum Dots and Quantum Dashes: Material Structures and Devices

Progress in Quantum Electronics
Electronic EngineeringStatisticalNonlinear PhysicsOpticsMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsElectronic
2014English

Polarization Control of Gain of Stacked InAs∕InP (100) Quantum Dots at 1.55μm: Interplay Between Ground and Excited State Transitions

Applied Physics Letters
AstronomyPhysics
2008English

Nonthermal Laser-Induced Formation of Crystalline Ge Quantum Dots on Si(100)

Journal of Applied Physics
AstronomyPhysics
2008English

Emission Enhancement of Cu-Doped InP Quantum Dots Through Double Shelling Scheme

Materials
Materials ScienceCondensed Matter Physics
2019English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy