Low Leakage Current Cu(Ti)/SiO2 Interconnection Scheme With a Self-Formed TiOx Diffusion Barrier

Applied Physics Letters - United States
doi 10.1063/1.1468913
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Low Current Resistive Switching in Cu–SiO2 Cells

Applied Physics Letters
AstronomyPhysics
2008English

Diffusion Titanium Aluminizing of Nickel With (Ti, Zr)N Barrier Layer

Research Bulletin of the National Technical University of Ukraine "Kyiv Politechnic Institute"
2016English

Self-Formation of Ti-Rich Interfacial Layers in Cu(Ti) Alloy Films

2006English

Pulsed Electric-Current Bonding of SiC to Cu With Ti Intermediate Layer

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Mechanics of MaterialsAlloysMaterials ChemistryCondensed Matter PhysicsMetals
2003English

Formation Mechanism of Diffusion-Reaction Layer for a Cu/Ti Diffusion Couple Under Different Heating Methods

Materiali in Tehnologije
PolymersAlloysPlasticsMetals
2017English

A Low-Diffusion MUSCL Scheme for LES on Unstructured Grids

Computers and Fluids
EngineeringComputer Science
2004English

A Low-Diffusion MUSCL Scheme for LES on Unstructured Grids

Computers and Fluids
EngineeringComputer Science
2004English

A New Leakage-Resilient IBE Scheme in the Relative Leakage Model

Lecture Notes in Computer Science
Computer ScienceTheoretical Computer Science
2011English

Improvement of Ta Barrier Film Properties in Cu Interconnection by Using a Non-Mass Separated Ion Beam Deposition Method

Materials Transactions
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2002English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy