Threshold-Voltage Instability in 4h-SiC MOSFETs With Nitrided Gate Oxide Revealed by Non-Relaxation Method
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes - Japan
doi 10.7567/jjap.55.04er11
Full Text
Open PDFAbstract
Available in full text
Date
March 3, 2016
Authors
Publisher
Japan Society of Applied Physics