Atomic Imaging of Atomic Layer Deposition Oxide Nucleation With Trimethylaluminum on As-Rich InGaAs(001) 2 × 4 vs Ga/in-Rich InGaAs(001) 4 × 2

Journal of Chemical Physics - United States
doi 10.1063/1.4704126
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Atomic Structure of InP(001)-(2×4): A Dimer Reconstruction

Physical Review B
1998English

Crystalline SrZrO3 Deposition on Ge (001) by Atomic Layer Deposition for High-K Dielectric Applications

Journal of Applied Physics
AstronomyPhysics
2018English

Formation of InGaAs Fins by Atomic Layer Epitaxy on InP Sidewalls

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2014English

Antimony-Stabilized GaAs(001)(2×4) Reconstructions

Physical Review B
1997English

Capacitance-Voltage Characterization of Atomic-Layer-Deposited Al2O3/InGaAs and Al2O3/GaAs Metal-Oxide-Semiconductor Structures

2006English

Atomic Layer Deposition of Pt@CsH 2 PO 4 for the Cathodes of Solid Acid Fuel Cells

Electrochimica Acta
Chemical EngineeringElectrochemistry
2018English

Competition Between Al2O3 Atomic Layer Etching and AlF3 Atomic Layer Deposition Using Sequential Exposures of Trimethylaluminum and Hydrogen Fluoride

Journal of Chemical Physics
MedicineTheoretical ChemistryAstronomyPhysicsPhysical
2017English

Coordination and Interface Analysis of Atomic-Layer-Deposition Al2O3 on Si(001) Using Energy-Loss Near-Edge Structures

Applied Physics Letters
AstronomyPhysics
2003English

Two-Dimensional Coarsening Kinetics of Reconstruction Domains:GaAs(001)−β(2×4)

Physical Review Letters
AstronomyPhysics
2003English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy