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Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate With a Novel Patterned SiO2/Al2O3 Passivation Layer
doi 10.7567/ssdm.2013.ps-7-2
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Date
January 1, 2013
Authors
H. Guo
H.J. Chen
X. Zhang
P.Y. Zhang
H.G. Liu
B. Sun
Q.H. Liao
S.J. Hu
S.K. Wang
Y.P. Cui
Publisher
The Japan Society of Applied Physics
