Effect of Growth Temperature of GaAs/Al_0.4Ga_0.6As Lower Cladding Layer on the Photoluminescence Intensity of InAs/Sb:GaAs Quantum Dots Monolithically Grown on Ge/Si Substrate by MOCVD for Laser Application
doi 10.1364/jsap.2014.20p_c1_3
Full Text
Open PDFAbstract
Available in full text
Date
January 1, 2014
Authors
Publisher
OSA