Development of New Zinc-Oxide Varistor With Higher Threshold Voltage for Compact Arresters

IEEJ Transactions on Power and Energy - Japan
doi 10.1541/ieejpes1990.120.7_968
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Related search

Voltage Distribution Studies on ZnO Arresters

IEE Proceedings - Generation, Transmission and Distribution
2002English

Voltage Nonlinear Properties of SiC Varistor

Journal of the Ceramic Association, Japan
1969English

Compact Threshold-Voltage Model for Short-Channel Partially-Depleted (PD) SOI Dynamic-Threshold MOS (DTMOS) Devices

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2002English

A Physics-Based Model of Threshold Voltage for Amorphous Oxide Semiconductor Thin-Film Transistors

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2016English

Zinc Oxide: Development of Novel Products for Weaned Piglets

2018English

Exaggerated Grain Growth of ZnO in Low Voltage ZnO Varistor.

Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
AlloysIndustrialMechanical EngineeringMetalsMaterials ChemistryManufacturing Engineering
1994English

Development of a New Cascade Voltage-Doubler for Voltage Multiplication

Chinese Journal of Engineering
EngineeringChemical Engineering
2014English

Preparation of Low Voltage ZnO Varistor Using Point Seed

2016English

The Sintering Effect of Lanthanum-Calcium Manganite Doping on Microstructure and Non-Linear Coefficient of Zinc Oxide Varistor

Materials Science Forum
2016English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy