Growth and Interface of HfO2 Films on H-Terminated Si From a TDMAH and H2O Atomic Layer Deposition Process
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - United States
doi 10.1116/1.2965813
Full Text
Open PDFAbstract
Available in full text
Date
September 1, 2008
Authors
Publisher
American Vacuum Society