Effects of Ga Composition Ratio and Annealing Temperature on the Electrical Characteristics of Solution-Processed IGZO Thin-Film Transistors

Journal of Semiconductor Technology and Science - South Korea
doi 10.5573/jsts.2014.14.2.163
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Institute of Electronics Engineers of Korea

Related search

The Electrical Performance of Different Channel Thicknesses for Igzo Thin Film Transistors

2019English

High Performance, Stable Solution-Processed Thin-Film Transistors

SPIE Newsroom
2012English

Hybrid Integration of Carbon Nanotube and Amorphous IGZO Thin-Film Transistors

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2020English

Low-Temperature, Solution-Processed, Transparent Zinc Oxide-Based Thin-Film Transistors for Sensing Various Solvents

Materials
Materials ScienceCondensed Matter Physics
2017English

Effect of Oxygen Amount on Electrical and Transparency Characteristics of Amorphous IGZO Thin Film Fabricated by Sputtering

Transactions of the Materials Research Society of Japan
2013English

Influence of Low Temperature Thermal Annealing on the Performance of Microcrystalline Silicon Thin-Film Transistors

Journal of Applied Physics
AstronomyPhysics
2007English

Design of Solution-Processed ZnO/SnO2 Heterostructures for High Performance Thin Film Transistors

2017English

5 v Input Level Shifter Circuit for IGZO Thin-Film Transistors

IEICE Electronics Express
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2014English

High-Performance Thin-Film Transistors Produced From Highly Separated Solution-Processed Carbon Nanotubes

Applied Physics Letters
AstronomyPhysics
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy