Positron Annihilation Studies in the Field Induced Depletion Regions of Metal‐oxide‐semiconductor Structures

Journal of Applied Physics - United States
doi 10.1063/1.350540
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Photo Induced Minority Carrier Annihilation at Crystalline Silicon Surface in Metal Oxide Semiconductor Structure

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2014English

High Mobility In0.53Ga0.47As Quantum-Well Metal Oxide Semiconductor Field Effect Transistor Structures

Journal of Applied Physics
AstronomyPhysics
2012English

Positron Annihilation Studies and Complementary Experimental Characterization of xAg2O–(1 − X)(0.3CdO–0.7MoO3) Metal Oxide Glass Nanocomposites

RSC Advances
ChemistryChemical Engineering
2017English

Radiation and Bias Switch-Induced Charge Dynamics in Al2O3-Based Metal-Oxide-Semiconductor Structures

Journal of Applied Physics
AstronomyPhysics
2014English

Field-Induced Water Electrolysis Switches an Oxide Semiconductor From an Insulator to a Metal

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2010English

Positron Annihilation in the bipositroniumPs2

Physical Review A
2005English

Depletion-Mode Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on Β-Ga2O3 (010) Substrates and Temperature Dependence of Their Device Characteristics

Applied Physics Letters
AstronomyPhysics
2013English

Metal-Oxide-Semiconductor Field Effect Transistor Humidity Sensor Using Surface Conductance

Applied Physics Letters
AstronomyPhysics
2012English

Study of Strain Relaxation in Si/SiGe Metal-Oxide-Semiconductor Field-Effect Transistors

Journal of Applied Physics
AstronomyPhysics
2005English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy