Resistance Dependence of Photovoltaic Effect in Au/SrTiO3:Nb(0.5 Wt %) Schottky Junctions

Applied Physics Letters - United States
doi 10.1063/1.3009285
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Photoresponse in La0.9Hf0.1MnO3/0.05wt%Nb-Doped SrTiO3 Heteroepitaxial Junctions

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Electrical Properties of Nb–MoSi2–Nb Josephson Junctions

Applied Physics Letters
AstronomyPhysics
2005English

Ferromagnetic Schottky Junctions Using Diamond Semiconductors

Journal of the Magnetics Society of Japan
Electronic EngineeringCondensed Matter PhysicsInstrumentationOpticalElectricalMagnetic MaterialsElectronic
2012English

Plasmonically Enhanced Schottky Photovoltaic Devices

Scientific Reports
Multidisciplinary
2017English

Transport Properties of Nb/PdNi Bilayers and Nb/PdNi/Nb Josephson Junctions

Journal of Physics: Conference Series
AstronomyPhysics
2009English

Interfacial Gate Resistance in Schottky-Barrier-Gate Field-Effect Transistors

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
1998English

Fabrication of Half-Metallic Co2MnSi/Diamond Schottky Junctions

2013English

Tailoring Resistive Switching in Pt/SrTiO3 Junctions by Stoichiometry Control

Scientific Reports
Multidisciplinary
2015English

The Effect of Stretching Thiyl– And Ethynyl–Au Molecular Junctions

Journal of Physics Condensed Matter
Materials ScienceCondensed Matter Physics
2007English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy