Amanote Research
Register
Sign In
High-Purity Refractory Metals for Thin Film Metallization of VLSI
doi 10.5772/intechopen.69126
Full Text
Open PDF
Abstract
Available in
full text
Date
February 28, 2018
Authors
Vadim Glebovsky
Publisher
InTech
Related search
Thick-Film Metallization Technology for the Aln-Ceramics Using Compounds Based on Refractory Metals
Electronic engineering. Series 2. Semiconductor device
Metallographic Preparation, Imaging and Analysis of High Purity Refractory Metals
Microscopy and Microanalysis
Instrumentation
Applications for High Purity Metals
Materia Japan
A Study of Collimated Sputtering for VLSI Metallization.
Preparation of High Purity Metals and Assesment of Their Purity.
Materia Japan
AEM Study of Thin and Thick Film Metallization on AIN Substrates
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Line Segment Simulation of Sputtered Thin Film Growth Over VLSI Topography.
Combinatorial Thin Film Synthesis for Developments of New High Dielectric Constant Thin Film Materials
Transactions of the Materials Research Society of Japan
High-Energy-Rate Forming of Refractory Metals.