Amanote Research

Amanote Research

    RegisterSign In

High-Purity Refractory Metals for Thin Film Metallization of VLSI

doi 10.5772/intechopen.69126
Full Text
Open PDF
Abstract

Available in full text

Date

February 28, 2018

Authors
Vadim Glebovsky
Publisher

InTech


Related search

Thick-Film Metallization Technology for the Aln-Ceramics Using Compounds Based on Refractory Metals

Electronic engineering. Series 2. Semiconductor device
2018English

Metallographic Preparation, Imaging and Analysis of High Purity Refractory Metals

Microscopy and Microanalysis
Instrumentation
2002English

Applications for High Purity Metals

Materia Japan
1994English

A Study of Collimated Sputtering for VLSI Metallization.

English

Preparation of High Purity Metals and Assesment of Their Purity.

Materia Japan
1996English

AEM Study of Thin and Thick Film Metallization on AIN Substrates

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
1987English

Line Segment Simulation of Sputtered Thin Film Growth Over VLSI Topography.

English

Combinatorial Thin Film Synthesis for Developments of New High Dielectric Constant Thin Film Materials

Transactions of the Materials Research Society of Japan
2018English

High-Energy-Rate Forming of Refractory Metals.

1971English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy