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High Carrier Concentration Induced Effects on the Bowing Parameter and the Temperature Dependence of the Band Gap of GaxIn1−xN
Journal of Applied Physics
- United States
doi 10.1063/1.3660692
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Categories
Astronomy
Physics
Date
November 15, 2011
Authors
O. Donmez
M. Gunes
A. Erol
M. C. Arikan
N. Balkan
Publisher
AIP Publishing
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