High-Efficiency P-I-N Photodetectors on Selective-Area-Grown Ge for Monolithic Integration

IEEE Electron Device Letters - United States
doi 10.1109/led.2009.2030905
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Ge-Photodetectors for Si-Based Optoelectronic Integration

Sensors
InstrumentationInformation SystemsElectronic EngineeringBiochemistryAnalytical ChemistryMolecular Physics,ElectricalAtomicMedicineOptics
2011English

Optimization of P-GaN/InGaN/N-GaN Double Heterojunction P-I-N Solar Cell for High Efficiency: Simulation Approach

International Journal of Photoenergy
Materials ScienceRenewable EnergyMolecular Physics,SustainabilityAtomicChemistryOpticsthe Environment
2014English

Multiscale Computer Aided Design of Microwave-Band P-I-N Photodetectors

2012English

Inhomogeneous GaInNAs Quantum Wells: Their Properties and Utilization for Improving of P-I-N and P-N Junction Photodetectors

Materials Science-Poland
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2018English

Monolithic Ge-On-Si Lasers for Integrated Photonics

2010English

Ge Nanoparticles in SiO2 for Near Infrared Photodetectors With High Performance

Scientific Reports
Multidisciplinary
2019English

Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications

ECS Transactions
Engineering
2016English

Monolithic Integration of III-nitride Voltage-Controlled Light Emitters With Dual-Wavelength Photodiodes by Selective-Area Epitaxy

Optics Letters
OpticsAtomicMolecular Physics,
2018English

High-Performance Photodetectors Based on Solution-Processed Epitaxial Grown Hybrid Halide Perovskites

English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy