Atomic-Layer Level Control in SiC Crystal Growth Using Gas Source Molecular Beam Epitaxy.
SHINKU
doi 10.3131/jvsj.35.905
Full Text
Open PDFAbstract
Available in full text
Date
January 1, 1992
Authors
Publisher
The Vacuum Society of Japan
Available in full text
January 1, 1992
The Vacuum Society of Japan