Atomic Level Observations of the Fundamental Processes of Dislocation Motion in Semiconductors

Materia Japan
doi 10.2320/materia.37.988
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Japan Institute of Metals

Related search

Dislocation Mobility Measurements : An Essential Tool for Understanding the Atomic and Electronic Core Structures of Dislocations I N Semiconductors

Le Journal de Physique Colloques
1983English

Physical Foundation and Consistent Formulation of Atomic-Level Fluxes in Transport Processes

Physical review. E
Nonlinear PhysicsProbabilityStatisticsCondensed Matter PhysicsStatistical
2018English

Atomic Layer Epitaxy of IV Group Semiconductors.

Hyomen Kagaku
1991English

Activation Volume of Dislocation Motion in Molybdenum

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Mechanics of MaterialsAlloysMaterials ChemistryCondensed Matter PhysicsMetals
1976English

Ultrafast Transient Nonlinear Optical Processes in Semiconductors

Semiconductors and Semimetals
Electronic EngineeringAlloysCondensed Matter PhysicsMaterials ChemistryMetalsOpticalElectricalMagnetic MaterialsElectronic
1998English

Dynamic Observations of Dislocation/Grain-Boundary Interactions in Ice

Annals of Glaciology
Earth-Surface Processes
2000English

Deep Level Point Imperfections in Semiconductors

Europhysics News
AstronomyPhysics
1987English

Fundamental Studies of Separation Processes

1978English

Observations of Atomic Gas in Photodissociation Regions

Symposium - International Astronomical Union
1992English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy