Stateful Characterization of Resistive Switching TiO2 With Electron Beam Induced Currents

Nature Communications- United Kingdom

doi 10.1038/s41467-017-02116-9

Full Text

Abstract

Available in

Date

Authors

Publisher

Springer Science and Business Media LLC

Related search

Remote Control of Resistive Switching in TiO2 Based Resistive Random Access Memory Device

Scientific Reports
Multidisciplinary
2017English

Resistive Switching: Cycling-Induced Degradation of Organic-Inorganic Perovskite-Based Resistive Switching Memory (Adv. Mater. Technol. 1/2019)

Advanced Materials Technologies
Mechanics of MaterialsMaterials ScienceIndustrialManufacturing Engineering
2019English

Chemical Composition of Electron‐beam Evaporated TiO2 Films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SurfacesFilmsInterfacesCondensed Matter PhysicsCoatings
1993English

Temperature Dependence of the Resistive Switching-Related Currents in Ultra-Thin High-K Based MOSFETs

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SurfacesElectronic EngineeringCondensed Matter PhysicsInstrumentationElectronicOpticalMaterials ChemistryElectricalMagnetic MaterialsFilmsProcess ChemistryCoatingsTechnology
2013English

Neuromorphic Computing With Resistive Switching Memory Devices

2019English

Anomalous Resistive Switching Phenomenon

Journal of Applied Physics
AstronomyPhysics
2012English

Electron-Beam-Induced Deposition With Carbon Nanotube Emitters

Applied Physics Letters
AstronomyPhysics
2002English

Resistive Switching Characteristics of a SiOxLayer With CF4Plasma Treatment

Journal of Nanomaterials
Materials ScienceNanotechnologyNanoscience
2014English

Multilevel Resistive Switching With Ionic and Metallic Filaments

Applied Physics Letters
AstronomyPhysics
2009English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy